Semiconductor Electronics: Materials, Devices and Simple Circuits

1. A.
   Curves 1 and 3 both correspond to forward biasing of p-n junction.
2. B.
   Curve 3 corresponds to forward biasing and Curve 1 corresponds to reverse biasing.
3. C.
   Curve 1 corresponds to forward biasing and Curve 3 corresponds to reverse biasing.
4. D.
   Curves 1 and 3 both correspond to reverse biasing.

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1. A.
   a diode between a left terminal at $+5$ V and a right terminal at $+10$ V
2. B.
   a diode between a left terminal at $-1{\cdot}0$ V and a right terminal at $-1{\cdot}5$ V
3. C.
   a diode between a left terminal at 0 V and a right terminal at 1 V
4. D.
   a diode between a left terminal at $-2$ V and a right terminal at 0 V

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1. A.
   $200\ \Omega$
2. B.
   $175\ \Omega$
3. C.
   $100\ \Omega$
4. D.
   $125\ \Omega$

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1. A.
   high resistance in reverse bias and a low resistance in forward bias
2. B.
   high resistance in both forward bias and reverse bias
3. C.
   low resistance in both reverse bias and forward bias
4. D.
   high resistance in forward bias and low resistance in reverse bias

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1. A.
   Diffusion current is zero but drift current exists.
2. B.
   Diffusion current exists but drift current is zero.
3. C.
   Diffusion and drift currents are equal and opposite.
4. D.
   Both the diffusion and drift currents exist but are unequal.

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1. A.
   forward biasing
2. B.
   reverse biasing
3. C.
   no biasing at low temperature
4. D.
   no biasing at high temperature

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1. A.
   p-region only
2. B.
   n-region only
3. C.
   depletion region
4. D.
   the diode

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Both Assertion (A) and Reason (R) are false.

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1. A.
   Phosphorus
2. B.
   Arsenic
3. C.
   Boron
4. D.
   Antimony

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1. A.
   $5 \times 10^{22}$ $\mathrm{m^{-3}}$
2. B.
   $1.5 \times 10^{6}$ $\mathrm{m^{-3}}$
3. C.
   $9 \times 10^{8}$ $\mathrm{m^{-3}}$
4. D.
   $4.5 \times 10^{9}$ $\mathrm{m^{-3}}$

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1. A.
   current is mainly due to drifting of majority carriers.
2. B.
   current is mainly due to drifting of minority carriers.
3. C.
   diffusion and drift currents are equal.
4. D.
   current is of the order of 1 A.

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1. A.
   0.2 V
2. B.
   0.5 V
3. C.
   0.7 V
4. D.
   1.5 V

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1. A.
   0.01 eV
2. B.
   0.05 eV
3. C.
   0.1 eV
4. D.
   0.15 eV

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1. A.
   electrons only
2. B.
   holes only
3. C.
   holes and few electrons
4. D.
   electrons and few holes

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1. A.
   Sn
2. B.
   Mica
3. C.
   Si
4. D.
   C

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1. A.
   both the potential barrier height and the width of depletion layer decrease.
2. B.
   both the potential barrier height and the width of depletion layer increase.
3. C.
   the potential barrier height decreases and the width of depletion layer increases.
4. D.
   the potential barrier height increases and the width of depletion layer decreases.

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1. A.
   the barrier height and the depletion layer width both increase.
2. B.
   the barrier height increases and the depletion layer width decreases.
3. C.
   the barrier height and the depletion layer width both decrease.
4. D.
   the barrier height decreases and the depletion layer width increases.

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1. A.
   resistor
2. B.
   inductor
3. C.
   capacitor
4. D.
   switch

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1. A.
   If both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion (A).
2. B.
   If both Assertion (A) and Reason (R) are true but Reason (R) is not the correct explanation of Assertion (A).
3. C.
   If Assertion (A) is true but Reason (R) is false.
4. D.
   If both Assertion (A) and Reason (R) are false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Both Assertion (A) and Reason (R) are false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Both Assertion (A) and Reason (R) are false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Both Assertion (A) and Reason (R) are false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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1. A.
   Boron
2. B.
   Antimony
3. C.
   Aluminium
4. D.
   Indium

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1. A.
   $0{\cdot}5$ eV
2. B.
   $0{\cdot}1$ eV
3. C.
   $0{\cdot}05$ eV
4. D.
   $0{\cdot}01$ eV

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1. A.
   a layer of negative charge on n-side and a layer of positive charge on p-side appear.
2. B.
   a layer of positive charge on n-side and a layer of negative charge on p-side appear.
3. C.
   the electrons on p-side of the junction move to n-side initially.
4. D.
   initially diffusion current is small and drift current is large.

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1. A.
   the drift current is of the order of few mA.
2. B.
   the applied voltage mostly drops across the depletion region.
3. C.
   the depletion region width decreases.
4. D.
   the current increases with increase in applied voltage.

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1. A.
   25 Hz
2. B.
   50 Hz
3. C.
   100 Hz
4. D.
   200 Hz

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1. A.
   the structure of Ge lattice is distorted.
2. B.
   the number of conduction electrons increases.
3. C.
   the number of holes increases.
4. D.
   the number of conduction electrons decreases.

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1. A.
   Al
2. B.
   B
3. C.
   P
4. D.
   In

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1. A.
   the barrier height decreases and the depletion region widens.
2. B.
   the barrier height increases and the depletion region widens.
3. C.
   the barrier height decreases and the depletion region shrinks.
4. D.
   the barrier height increases and the depletion region shrinks.

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1. A.
   $0{\cdot}01$ eV
2. B.
   $0{\cdot}05$ eV
3. C.
   $0{\cdot}72$ eV
4. D.
   $1{\cdot}1$ eV

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1. A.
   $1.2 \times 10^{15}$
2. B.
   $1.5 \times 10^{16}$
3. C.
   $3.0 \times 10^{15}$
4. D.
   $2.0 \times 10^{16}$

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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1. A.
   0.001 eV
2. B.
   0.01 eV
3. C.
   0.72 eV
4. D.
   1.1 eV

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1. A.
   $2 \times 10^{24}\ \mathrm{m^{-3}}$
2. B.
   $4 \times 10^{23}\ \mathrm{m^{-3}}$
3. C.
   $1 \times 10^{22}\ \mathrm{m^{-3}}$
4. D.
   $5 \times 10^{22}\ \mathrm{m^{-3}}$

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1. A.
   electrons diffuse from p-region into n-region and holes diffuse from n-region into p-region.
2. B.
   both electrons and holes diffuse from n-region into p-region.
3. C.
   electrons diffuse from n-region into p-region and holes diffuse from p-region into n-region.
4. D.
   both electrons and holes diffuse from p-region into n-region.

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1. A.
   diffusion current is large and drift current is small.
2. B.
   diffusion current is small and drift current is large.
3. C.
   both the diffusion and the drift currents are large.
4. D.
   both the diffusion and the drift currents are small.

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1. A.
   25 Hz, 50 Hz
2. B.
   25 Hz, 100 Hz
3. C.
   50 Hz, 50 Hz
4. D.
   50 Hz, 100 Hz

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1. A.
   $\dfrac{\mathrm{V}_0}{\sqrt{2}}$
2. B.
   $\dfrac{\mathrm{V}_0^2}{\sqrt{2}}$
3. C.
   $\dfrac{2\mathrm{V}_0}{\sqrt{2}}$
4. D.
   $\dfrac{\mathrm{V}_0}{2\sqrt{2}}$

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1. A.
   Complete cycle of the input signal
2. B.
   Half cycle of the input signal
3. C.
   Less than half cycle of the input signal
4. D.
   Only for the positive half cycle of the input signal

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1. A.
   Both diodes are forward biased at the same time.
2. B.
   Both diodes are reverse biased at the same time.
3. C.
   One is forward biased and the other is reverse biased at the same time.
4. D.
   Both are forward biased in the first half of the cycle and reverse biased in the second half of the cycle.

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1. A.
   100 Hz
2. B.
   50 Hz
3. C.
   25 Hz
4. D.
   150 Hz

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1. A.
   10 V
2. B.
   $-$ 10 V
3. C.
   $-$ 5 V
4. D.
   $+$ 5 V

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1. A.
   intrinsic semiconductor
2. B.
   p-type semiconductor
3. C.
   n-type semiconductor
4. D.
   p-n junction diode

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1. A.
   same as that at 0°C
2. B.
   same as that at 300 K
3. C.
   zero
4. D.
   infinite

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1. A.
   The potential barrier decreases.
2. B.
   Minority carrier injection occurs.
3. C.
   Width of depletion layer increases.
4. D.
   Forward current is due to the diffusion of both holes and electrons.

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1. A.
   Ge
2. B.
   C
3. C.
   Si
4. D.
   Pb

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1. A.
   0.01 eV
2. B.
   0.05 eV
3. C.
   0.7 eV
4. D.
   1.1 eV

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1. A.
   diffusion current keeps increasing.
2. B.
   drift current remains constant.
3. C.
   both the diffusion current and drift current remain constant.
4. D.
   diffusion current remains almost constant but drift current increases till both currents become equal.

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1. A.
   A full sinusoid — a hump above the t-axis followed by a hump below it, and so on.
2. B.
   A train of humps above the t-axis, each beginning where the previous one ends, with no gap between them.
3. C.
   Humps above the t-axis separated by flat stretches along the t-axis of about the same width as each hump.
4. D.
   A horizontal straight line at a constant positive value of V.

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1. A.
   $1.8 \times 10^{9}$ m$^{-3}$
2. B.
   $2.4 \times 10^{10}$ m$^{-3}$
3. C.
   $3.6 \times 10^{9}$ m$^{-3}$
4. D.
   $3.2 \times 10^{10}$ m$^{-3}$

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1. A.
   $3 \times 10^{6}\ \mathrm{m^{-3}}$
2. B.
   $5 \times 10^{7}\ \mathrm{m^{-3}}$
3. C.
   $5 \times 10^{9}\ \mathrm{m^{-3}}$
4. D.
   $6{\cdot}75 \times 10^{38}\ \mathrm{m^{-3}}$

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1. A.
   both increases.
2. B.
   both decreases.
3. C.
   copper increases and silicon decreases.
4. D.
   copper decreases and silicon increases.

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1. A.
   its resistance increases.
2. B.
   it becomes a p-type semiconductor.
3. C.
   there will be more free electrons than holes in the semiconductor.
4. D.
   dopant atoms become donor atoms.

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1. A.
   the potential barrier is lowered.
2. B.
   the potential barrier remains unaffected.
3. C.
   the potential barrier is raised.
4. D.
   the current is mainly due to majority carriers.

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1. A.
   movement of dopant atoms
2. B.
   diffusion of both electrons and holes
3. C.
   drift of electrons only
4. D.
   drift of holes only

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1. A.
   Forward biasing, 0 A
2. B.
   Reverse biasing, 0 A
3. C.
   Forward biasing, 5 mA
4. D.
   Reverse biasing, 2 mA

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1. A.
   10 eV
2. B.
   1 eV
3. C.
   $0{\cdot}1$ eV
4. D.
   $0{\cdot}01$ eV

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1. A.
   Both Assertion (A) and Reason (R) are true and (R) is the correct explanation of (A).
2. B.
   Both Assertion (A) and Reason (R) are true and (R) is NOT the correct explanation of (A).
3. C.
   Assertion (A) is true and Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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1. A.
   Both Assertion (A) and Reason (R) are true and (R) is the correct explanation of (A).
2. B.
   Both Assertion (A) and Reason (R) are true and (R) is NOT the correct explanation of (A).
3. C.
   Assertion (A) is true and Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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1. A.
   Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
2. B.
   Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
3. C.
   Assertion (A) is true, but Reason (R) is false.
4. D.
   Assertion (A) is false and Reason (R) is also false.

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