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Charge carriers and net charge in doped (n-type, p-type) semiconductors

This type of question, asked 3 times: 2021 Paper 18, 25 Jan 2023, 4 Apr 2025. All 3 questions below, oldest first.

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  1. Question 1

    2021 Paper 18

    20
    Statement-I: By doping silicon semiconductor with pentavalent material, the electrons density increases. Statement-II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:

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  2. Question 2

    25 Jan 2023

    107
    Statement I: When a Si sample is doped with Boron, it becomes PP type and when doped by Arsenic it becomes NN-type semi conductor such that PP-type has excess holes and NN-type has excess electrons. Statement II: When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter. In the light of above statements, choose the most appropriate answer from the options given below

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  3. Question 3

    4 Apr 2025

    91
    Consider a n-type semiconductor in which nen_{e} and nhn_{h} are number of electrons and holes, respectively. (A) Holes are minority carriers (B) The dopant is a pentavalent atom (C) nenh≠ni2n_{e}n_{h} \neq n_{i}^{2} (where nin_{i} is number of electrons or holes in semiconductor when it is intrinsic form) (D) nenh≥ni2n_{e}n_{h} \geq n_{i}^{2} (E) The holes are not generated due to the donors Choose the correct answer from the options given below:

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