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New hole concentration in silicon after adding phosphorus atoms (10^16 and 10^21 per m^3)

The same question, asked 2 times: 22 Apr 2025 S1, 13 Apr 2026 S2. Every wording below, oldest first.

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  1. Question 1

    22 Apr 2025 S1

    4
    In a pure silicon crystal electron-hole concentration is 101610^{16} per m3m^{3} at 301 K . Now 102110^{21} atoms of phosphorus are added per cubic meter. The new hole concentration in silicon is (in per m3m^{3})

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  2. Question 2

    13 Apr 2026 S2

    148
    A pure silicon crystal at temperature 300300 K has electron and hole concentration (ni)(n_i) 101610^{16} per m3\mathrm{m^3} each and 102110^{21} phosphorus atoms (ne)(n_e) are added per cubic metre. The new hole concentration in silicon crystal is

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