PYQ Vault

Semiconductor Electronics

JEE Mains Physics. Try each one first, then open its answer.

Top 10 JEE Mains PYQs to practise first

The questions and kinds of question asked most often come first. Each one says how often and in which papers.

  1. Question 1

    This type asked 6 times: 2021 Paper 21, 29 Jul 2022, 10 Apr 2023, 1 Feb 2024, 24 Jan 2026 S1, 4 Apr 2026 S2. This one: 4 Apr 2026 S2 See all 6 of this type

    21
    A diode has Zener voltage of 10 V and maximum power dissipation of 0.5 W , then the minimum resistance to be used in series with this diode for safety when it is connected to a 25 V power supply is ____\_\_\_\_ Ω\Omega.
  2. Question 2

    This type asked 5 times: 2021 Paper 25, 25 Jul 2022, 1 Feb 2024, 6 Apr 2024, 9 Apr 2024. This one: 9 Apr 2024 See all 5 of this type

    5
    A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is 1.42eV1.42eV. The wavelength of light emitted from the LED is:

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  3. Question 3

    This type asked 5 times: 14 Jun 2022, 25 Jun 2022, 29 Jun 2022, 26 Jul 2022, 13 Apr 2023. This one: 13 Apr 2023 See all 5 of this type

    30
    From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is 10x10^{x}, for RB=10kΩR_{B}= 10k\Omega, and RC=1kΩR_{C}= 1k\Omega. The value of xx is_____
  4. Question 4

    This type asked 4 times: 2021 Paper 11, 2021 Paper 26, 30 Jan 2024, 2 Apr 2025. This one: 2 Apr 2025 See all 4 of this type

    11
    A Zener diode with 5 V Zener voltage is used to regulate an unregulated dc voltage input of 25 V . For a 400Ω400\Omega resistor connected in series, the zener current is found to be 4 times load current. The load current (IL)\left( I_{L} \right) and load resistance (RL)\left( R_{L} \right) are :

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  5. Question 5

    This type asked 3 times: 2021 Paper 18, 25 Jan 2023, 4 Apr 2025. This one: 4 Apr 2025 See all 3 of this type

    91
    Consider a n-type semiconductor in which nen_{e} and nhn_{h} are number of electrons and holes, respectively. (A) Holes are minority carriers (B) The dopant is a pentavalent atom (C) nenh≠ni2n_{e}n_{h} \neq n_{i}^{2} (where nin_{i} is number of electrons or holes in semiconductor when it is intrinsic form) (D) nenh≥ni2n_{e}n_{h} \geq n_{i}^{2} (E) The holes are not generated due to the donors Choose the correct answer from the options given below:

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  6. Question 6

    This type asked 3 times: 2021 Paper 1, 27 Jul 2022, 12 Apr 2023. This one: 12 Apr 2023 See all 3 of this type

    4
    In an n−p−nn - p - n common emitter (CE) transistor the collector current changes from 5 mA5\text{ }mA to 16 mA16\text{ }mA for the change in base current from 100μA100\mu A and 200μA200\mu A, respectively. The current gain of transistor is____

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  7. Question 7

    This type asked 3 times: 25 Jun 2022, 24 Jan 2023, 25 Jan 2023. This one: 25 Jan 2023 See all 3 of this type

    7
    Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity. Reason R: For a p-n junction diode, at applied voltage VV the current in the forward bias is more than the current in the reverse bias for ∣Vz∣>±V≥\left| V_{z} \right|> \pm V \geq ∣V0∣\left| V_{0} \right| where V0V_{0} is the threshold voltage and VzV_{z} is the breakdown voltage. In the light of the above statements, choose the correct answer from the options given below

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  8. Question 8

    Asked 2 times: 2021 Paper 21*, 10 Apr 2023 (* = numbers or wording changed that year) See all 2 times it was asked

    3
    A zener diode of power rating 1.6 W1.6\text{ }W is to be used as voltage regulator. If the zener diode has a breakdown of 8 V8\text{ }V and it has to regulate voltage fluctuating between 3 V3\text{ }V and 10 V10\text{ }V. The value of resistance RsR_{s} for safe operation of diode will be:

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  9. Question 9

    Asked 2 times: 2021 Paper 10, 2021 Paper 21 See all 2 times it was asked

    3
    For a transistor α\alpha and β\beta are given as α=ICIE\alpha=\frac{I_{C}}{I_{E}} and β=ICIB\beta=\frac{I_{C}}{I_{B}}. Then the correct relation between α\alpha and β\beta will be:

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  10. Question 10

    This type asked 2 times: 27 Jan 2024, 22 Jan 2025. This one: 22 Jan 2025 See all 2 of this type

    18
    Which of the following circuits represents a forward biased diode? (A) p-side at −10 V-10\ V, n-side at 0 V0\ V (B) p-side at −10 V-10\ V, n-side at −15 V-15\ V (C) p-side at 4 V4\ V, n-side at 2 V2\ V (D) p-side at −10 V-10\ V, n-side at −5 V-5\ V (E) p-side at 2 V2\ V, n-side earthed (0 V0\ V) Choose the correct answer from the options given below :

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